Technology of anisotropic magneto resistive sensor on silicon substrate

Abstract

In this paper will be described magneto resistive sensor design using thin film technology. A thin layer of alloy (Ni-Cr) will be grown on silicon substrates by evaporation or DC-Sputtering. Also reported the results of the characterization of thin film coating deposition Ni80Cr20with and without magnetisation by SEM, EDS and GMR meter. By using photolithography and etching process, a layer of Ni-Cr alloy and then patterned to form some of the microstructure of theinter-connected into a bridge. By applying a magnetic field in the arms of the bridge structures which face each other, will create an asymmetry in the bridge. In this way, it is expected microstructure formed can serve as a magneto resistive sensor that can detect magnetic fields below 5 mT, which are needed in navigation systems.